ES1B 查看數據表（PDF） - Silicon Standard Corp.
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ES1B Datasheet PDF : 3 Pages
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ES1M
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Parameter
Symbols
ES
1A
Maximum repetitive peak reverse voltage
VRRM
50
Maximum RMS voltage
VRMS
35
Maximum DC blocking voltage
Maximum average forward rectified current
See Fig. 1
Peak forward surge current, 8.3ms single
half sine-wave superimposed on rated load
(JEDEC Method)
VDC
50
I(AV)
IFSM
Maximum instantaneous forward voltage @ 1.0A
V
F
Maximum DC reverse current
at rated DC blocking voltage
@ TA=25oC
@ TA=100oC
IR
Maximum reverse recovery time (Note 1)
trr
Typical junction capacitance (Note 2)
CJ
Typical thermal resistance (Note 3)
RθJA
RθJL
Operating junction temperature range
TJ
Storage temperature range
TSTG
Notes:
1. Reverse Recovery Test Conditions: I =0.5A, I =1.0A, I =0.25A
F
R
RR
2. Measured at 1 MHz and Applied VR=4.0 Volts
3. P.C.B. Mounted on 0.2 x 0.2" (5.0 x 5.0mm) Copper Pad Area.
ES
1B
ES
1C
ES
1D
ES
1F
ES
1G
ES
1J
ES
1K
ES
1M
Units
100 150 200 300 400 600 800 1000 Volts
70
105 140 210 280 420 560 700 Volts
100 150 200 300 400 600 800 1000 Volts
1.0
Amp
30.0
Amps
0.95
1.3
5.0
100
35
1.7
Volts
uA
uA
nS
10
8
85
35
-55 to +150
pF
oC/W
oC
-55 to +150
oC
07/04/2007 Rev.1.00
www.SiliconStandard.com
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