75645S 查看數據表（PDF） - Fairchild Semiconductor
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75645S Datasheet PDF : 10 Pages
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HUF75645P3, HUF75645S3S
Typical Performance Curves (Continued)
600
100
100µs
10 OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
SINGLE PULSE
1
TJ
TC
=
=
MAX RATED
25oC
1ms
10ms
1
10
100
300
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
500
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
100
STARTING TJ = 25oC
STARTING TJ = 150oC
10
0.001
0.01
0.1
1
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
150
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
120 VDD = 15V
90
60
30
0
2
TJ = 175oC
TJ = -55oC
TJ = 25oC
3
4
5
6
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
150
VGS = 20V
VGS = 10V
120
90
VGS = 7V
VGS = 6V
VGS =5V
60
30
0
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 8. SATURATION CHARACTERISTICS
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.5
VGS = 10V, ID = 75A
2.0
1.5
1.0
0.5
-80
-40
0
40
80
120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.2
VGS = VDS, ID = 250µA
1.0
0.8
0.6
0.4
-80 -40
0
40
80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
HUF75645P3, HUF75645S3S Rev. B
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