HY57V641620HG-I 查看數據表（PDF） - Hynix Semiconductor

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HY57V641620HG-I

4 Banks x 1M x 16Bit Synchronous DRAM

Hynix Semiconductor 

HY57V641620HG-I Series

4 Banks x 1M x 16Bit Synchronous DRAM

HY57V641620HG(L)T-8I

CAS Latency

tRCD

tRAS

tRC

tRP

tAC

125MHz(8ns)

3CLKs

3CLKs

7CLKs

10CLKs

3CLKs

6ns

100MHz(10ns)

2CLKs

2CLKs

5CLKs

7CLKs

3CLKs

6ns

83MHz(12ns)

3CLKs

3CLKs

6CLKs

9CLKs

2CLKs

6ns

HY57V641620HG(L)T-PI

CAS Latency

tRCD

tRAS

tRC

tRP

tAC

100MHz(10ns)

2CLKs

2CLKs

5CLKs

7CLKs

2CLKs

6ns

83MHz(12ns)

2CLKs

2CLKs

5CLKs

7CLKs

2CLKs

6ns

66MHz(15ns)

2CLKs

2CLKs

4CLKs

6CLKs

2CLKs

6ns

HY57V641620HG(L)T-SI

CAS Latency

tRCD

tRAS

tRC

tRP

tAC

100MHz(10ns)

3CLKs

2CLKs

5CLKs

7CLKs

2CLKs

6ns

83MHz(12ns)

2CLKs

2CLKs

5CLKs

7CLKs

2CLKs

6ns

66MHz(15ns)

2CLKs

2CLKs

4CLKs

6CLKs

2CLKs

6ns

tOH

2.0ns

2.0ns

2.0ns

tOH

2.0ns

2.0ns

2.0ns

tOH

2.0ns

2.0ns

2.0ns

This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use

of circuits described. No patent licenses are implied.

Rev. 1.0/Jan. 02

10

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