IRF610(2008) 查看數據表（PDF） - Vishay Semiconductors

零件编号

产品描述 (功能)

比赛名单

IRF610
(Rev.:2008)

Power MOSFET

Vishay Semiconductors 

Fig. 9 - Maximum Drain Current vs. Case Temperature

IRF610, SiHF610

Vishay Siliconix

VDS

VGS

RG

RD

D.U.T.

10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

+- VDD

Fig. 10a - Switching Time Test Circuit

VDS

90 %

10 %

VGS

td(on) tr

td(off) tf

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

VDS

Vary tp to obtain

required IAS

RG

10 V

tp

L

D.U.T

IAS

0.01 Ω

+

- VDD

Fig. 12a - Unclamped Inductive Test Circuit

Document Number: 91023

S-81240-Rev. A, 16-Jun-08

VDS

VDS

tp

VDD

IAS

Fig. 12b - Unclamped Inductive Waveforms

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