IRF710(2011) 查看數據表（PDF） - Vishay Semiconductors
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IRF710 Datasheet PDF : 9 Pages
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IRF710, SiHF710
Vishay Siliconix
400
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
300
Coss = Cds + Cgd
Ciss
200
100
Coss
Crss
0
100
91041_05
101
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
100
150 °C
25 °C
10-1
0.4
91041_07
VGS = 0 V
0.6
0.8
1.0
1.2
1.4
VSD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20 ID = 2.0 A
16
VDS = 320 V
VDS = 200 V
12
VDS = 80 V
8
4
0
0
91041_06
For test circuit
see figure 13
2
4
6
8
10 12
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
102
Operation in this area limited
5
by RDS(on)
2
10
5
2
1
5
2
0.1
1
91041_08
100 µs
1 ms
TC = 25 °C
TJ = 150 °C
Single Pulse
10 ms
2
5 10 2
5 102 2
5 103
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 91041
S11-0508-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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