FA01220A 查看數據表（PDF） - MITSUBISHI ELECTRIC

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FA01220A

GaAs FET HYBRID IC

MITSUBISHI ELECTRIC  

DESCRIPTION

FA01220A is RF Hybrid IC designed for 1.5GHz band

small size handheld radio.

FEATURES

• Low voltage

• High gain

• High efficiency

• High power

3.5V

20.5B

50%

30.5dBm

APPLICATION

PDC1.5GHz

MITSUBISHI SEMICONDUCTOR GaAs FET

FA01220A

GaAs FET HYBRID IC

GND

1

8

2

7

3

6

4

5

GND

10.0

Unit:mm

0.8

2.0

6.0

tolerance:±0.2

1 RF INPUT

2 VD1

3 GND

4 VD2

5 RF OUTPUT

6 GND

7 GND

8 VG1,2

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Condition

VD

Drain voltage

Tc=25˚C, Po≤30.5dBm

Pin

Input power

Tc=25˚C, ZG=ZL=50Ω

TC(op) Operating case temp

Tstg

Storage temp

Note: Each maximum ratings is guaranteed independently and duty=1/3 operation. T=20 msec

ELECTRICAL CHARACTERISTICS(Ta=25˚C)

Symbol

Parameter

f

Pin

IDt

ρin

ACP50

ACP100

2fo

3fo

Frequency

Input power

PO=30.5dBm

Total drain current

VD1=VD2=3.5V

Return loss

VG1,2=-2.5V

±50kHz adjacent channel power ZG=ZL=50Ω

±100kHz adjacent channel power (π/4DQPSK)

2nd harmonics

3rd harmonics

Ditto

(CW)

Test conditions

Ratings

4.5

15

-20 to +85

-30 to +90

Unit

V

dBm

˚C

˚C

Min

1429

–

–

–

–

–

–

–

Limits

Typ

–

(7)

640

–

–

–

–

–

Max

1453

10

720

-6

-47

-62

-30

-30

Unit

MHz

dBm

mA

dB

dBc

dBc

dBc

dBc

Nov. ´97

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