IRFBC40 查看數據表（PDF） - Harris Semiconductor
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IRFBC40 Datasheet PDF : 7 Pages
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IRFBC40, IRFBC42
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
Internal Drain Inductance
Internal Source Inductance
LD Measured From the Drain Modified MOSFET
Lead, 6mm (0.25in) From Symbol Showing the
Package to Center of Die Internal Devices
LS Measured From the
Source Lead, 6mm
Inductances
D
(0.25in) From Header to
LD
Source Bonding Pad
G
LS
S
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
RθJC
RθJA
Typical Socket Mount
MIN TYP MAX UNITS
-
4.5
-
nH
-
7.5
-
nH
-
-
1.0 oC/W
-
-
80 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous Source to Drain Current
ISD
Modified MOSFET
Symbol Showing the
D
Pulse Source to Drain Current
ISDM Integral Reverse
(Note 3)
P-N Junction Diode
G
MIN TYP MAX UNITS
-
-
6.2
A
-
-
25
A
S
Diode Source to Drain Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
TJ = 25oC, ISD = 6.2A, VGS = 0V, (Figure 8)
-
-
1.5
V
trr
TJ = 25oC, ISD = 6.2A, dISD/dt = 100A/µs
200 450 940 ns
QRR
TJ = 25oC, ISD = 6.2A, dISD/dt = 100A/µs
1.8 3.8 8.0
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 16mH, RG = 25Ω, peak IAS = 6.8A. (Figures 15, 16).
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
10
8
6
4
IRFBC42
IRFBC40
2
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
5-3
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