IRFD9110 查看數據表（PDF） - Fairchild Semiconductor

零件编号

产品描述 (功能)

比赛名单

IRFD9110

0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET

Fairchild Semiconductor 

Data Sheet

January 2002

IRFD9110

0.7A, 100V, 1.200 Ohm, P-Channel Power

MOSFET

This P-Channel enhancement mode silicon gate power field

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a specified level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching convertors, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

Formerly developmental type TA17541.

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRFD9110

HEXDIP

IRFD9110

NOTE: When ordering, use the entire part number.

Features

• 0.7A, 100V

• rDS(ON) = 1.200Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

Symbol

D

G

S

Packaging

HEXDIP

GATE

DRAIN

SOURCE

©2002 Fairchild Semiconductor Corporation

IRFD9110 Rev. B

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