IRFI9640G 查看數據表（PDF） - Vishay Semiconductors

零件编号

产品描述 (功能)

比赛名单

IRFI9640G

Power MOSFET(Vdss=-200V/ Rds(on)=0.50ohm/ Id=-6.1A)

Vishay Semiconductors 

Fig. 9 - Maximum Drain Current vs. Case Temperature

IRFI9640G, SiHFI9640G

Vishay Siliconix

VDS

VGS

RG

RD

D.U.T.

- 10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

-

+VDD

Fig. 10a - Switching Time Test Circuit

VGS

10 %

td(on) tr

td(off) tf

90 %

VDS

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

VDS

Vary tp to obtain

required IAS

RG

- 10 V

tp

L

D.U.T.

IAS

0.01 Ω

-

+

V

DD

Fig. 12a - Unclamped Inductive Test Circuit

Document Number: 91169

S-Pending-Rev. A, 16-Jun-08

IAS

VDS

VDD

tp

VDS

Fig. 12b - Unclamped Inductive Waveforms

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