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零件编号
产品描述 (功能)
IRGIB7B60KD 查看數據表(PDF) - International Rectifier
零件编号
产品描述 (功能)
比赛名单
IRGIB7B60KD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
IRGIB7B60KD Datasheet PDF : 12 Pages
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IRGIB7B60KD
40
35
VGE = 18V
VGE = 15V
30
VGE = 12V
VGE = 10V
25
VGE = 8.0V
20
15
10
5
0
0
1
2
3
4
5
6
VCE (V)
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80µs
40
35
30
VGE = 18V
VGE = 15V
25
VGE = 12V
VGE = 10V
20
VGE = 8.0V
15
10
5
0
0
1
2
3
4
5
6
VCE (V)
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80µs
40
35
30
25
VGE = 18V
VGE = 15V
20
VGE = 12V
VGE = 10V
15
VGE = 8.0V
10
5
0
0
1
2
3
4
5
6
VCE (V)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 150°C; tp = 80µs
4
30
-40°C
25
25°C
150°C
20
15
10
5
0
0.0
0.5
1.0
1.5
2.0
VF (V)
Fig. 8
- Typ. Diode Forward Characteristics
tp = 80µs
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