IRGPH20S
600
V GE = 0V,
f = 1MHz
Cies = Cge + C gc , Cce SHORTED
500
Cres = C gc
Coes = Cce + C gc
400
C ies
300
Coes
200
100
Cres
0
A
1
10
100
VCE, Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
5.60
VCC = 960V
VGE = 15V
TC = 25°C
5.56 I C = 6.6A
5.52
5.48
5.44
5.40
0
A
10
20
30
40
50
60
RG , Gate Resistance (Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
20
VCE = 400V
IC = 6.6A
16
12
8
4
0
A
0
4
8
12
16
20
Qg , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
100
RG = 50Ω
VGE = 15V
VCC = 960V
10
I C = 10A
I C = 6.6A
IC = 3.3A
1
A
-60 -40 -20 0 20 40 60 80 100 120 140 160
TC, Case Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-43