IRGB10B60KDPBF 查看數據表（PDF） - International Rectifier

零件编号

产品描述 (功能)

比赛名单

IRGB10B60KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

IRG/B/S/SL10B60KDPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

Ref.Fig.

V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, IC = 500μA

ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage ––– 0.3 ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-150°C)

VCE(on)

Collector-to-Emitter Saturation Voltage 1.5 1.80 2.20

IC = 10A, VGE = 15V

5, 6,7

––– 2.20 2.50 V IC = 10A, VGE = 15V TJ = 150°C 9,10,11

VGE(th)

Gate Threshold Voltage

3.5 4.5 5.5 V VCE = VGE, IC = 250μA

9,10,11

ΔVGE(th)/ΔTJ Temperature Coeff. of Threshold Voltage ––– -10 ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-150°C) 12

gfe

Forward Transconductance

––– 7.0 ––– S VCE = 50V, IC = 10A, PW=80μs

ICES

Zero Gate Voltage Collector Current

––– 3.0 150 μA VGE = 0V, VCE = 600V

––– 300 700

VGE = 0V, VCE = 600V, TJ = 150°C

VFM

Diode Forward Voltage Drop

––– 1.30 1.45

IC = 10A

8

––– 1.30 1.45 V IC = 10A TJ = 150°C

IGES

Gate-to-Emitter Leakage Current

––– ––– ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Qg

Qge

Qgc

Eon

Eoff

Etot

td(on)

tr

td(off)

tf

Eon

Eoff

Etot

td(on)

tr

td(off)

tf

Cies

Coes

Cres

RBSOA

SCSOA

Erec

trr

Irr

Parameter

Total Gate Charge (turn-on)

Gate - Emitter Charge (turn-on)

Gate - Collector Charge (turn-on)

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Reverse Bias Safe Operting Area

Short Circuit Safe Operting Area

Reverse Recovery energy of the diode

Diode Reverse Recovery time

Diode Peak Reverse Recovery Current

Min. Typ. Max.

––– 38 –––

––– 4.3 –––

––– 16.3 –––

––– 140 247

––– 250 360

––– 390 607

––– 30 39

––– 20 29

––– 230 262

––– 23 32

––– 230 340

––– 350 464

––– 580 804

––– 30 39

––– 20 28

––– 250 274

––– 26 34

––– 620 –––

––– 62 –––

––– 22 –––

FULL SQUARE

10 ––– –––

––– 245 330

––– 90 105

––– 19 22

Units

nC

μJ

ns

μJ

ns

pF

μs

μJ

ns

A

Conditions

IC = 10A

VCC = 400V

VGE = 15V

IC = 10A, VCC = 400V

VGE = 15V,RG = 47Ω, L = 200μH

Ls = 150nH

TJ = 25°C ƒ

IC = 10A, VCC = 400V

VGE = 15V, RG = 47Ω, L = 200μH

Ls = 150nH, TJ = 25°C

Ref.Fig.

CT1

CT4

CT4

IC = 10A, VCC = 400V

CT4

VGE = 15V,RG = 47Ω, L = 200μH

13,15

Ls = 150nH

TJ = 150°C ƒ WF1WF2

IC = 10A, VCC = 400V

14, 16

VGE = 15V, RG = 47Ω, L = 200μH

CT4

Ls = 150nH, TJ = 150°C

WF1

WF2

VGE = 0V

VCC = 30V

f = 1.0MHz

TJ = 150°C, IC = 44A, Vp =600V

4

VCC = 500V, VGE = +15V to 0V,RG = 47Ω CT2

TJ = 150°C, Vp =600V,RG = 47Ω

CT3

VCC = 360V, VGE = +15V to 0V

TJ = 150°C

VCC = 400V, IF = 10A, L = 200μH

VGE = 15V,RG = 47Ω, Ls = 150nH

WF4

17,18,19

20, 21

CT4,WF3

Note  to „ are on page 15

2

www.irf.com

Share Link: