IS62LV12816L-100T 查看數據表（PDF） - Integrated Circuit Solution Inc

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IS62LV12816L-100T

128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

Integrated Circuit Solution Inc 

IS62LV12816L

IS62LV12816LL

WRITE CYCLE NO. 4 (UB / LB Controlled)

ADDRESS

t WC

ADDRESS 1

t WC

ADDRESS 2

OE

t SA

CS LOW

WE

UB, LB

DOUT

DIN

t PWB

t HZWE

DATA UNDEFINED

WORD 1

HIGH-Z

t SD

DATAIN

VALID

t HA

t SA

t PWB

WORD 2

t HA

t LZWE

t HD

t SD

DATAIN

VALID

t HD

DATA RETENTION SWITCHING CHARACTERISTICS (L/LL)

Symbol Parameter

Test Condition

Min. Max. Unit

VDR

Vcc for Data Retention

See Data Retention Waveform

1.5 3.6

V

IDR

Data Retention Current

Vcc = 2.0V, CE ≥ Vcc – 0.2V Com. (-L) — 20

µA

Com. (-LL) — 5

µA

Ind. (-L) — 25

µA

Ind. (-LL) — 7

µA

tSDR

Data Retention Setup Time See Data Retention Waveform

0—

ns

tRDR

Recovery Time

See Data Retention Waveform

tRC —

ns

DATA RETENTION WAVEFORM (CE Controlled)

VCC

2.7V

tSDR

Data Retention Mode

tRDR

2.2V

VDR

CE

GND

CE ≥ VCC - 0.2V

Integrated Circuit Solution Inc.

9

SR020-0C

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