KTC4075 查看數據表（PDF） - TY Semiconductor

零件编号

产品描述 (功能)

比赛名单

KTC4075

Epitaxial Planar NPN Transistor

TY Semiconductor 

SSMMDD TTyyppee

■ Features

● Collector Power Dissipation: PC=100mW

● Collector Current: IC=150mA

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Product specification

KTC4075

SOT-23

2.9+0.1

-0.1

0.4+0.1

-0.1

3

1

2

0.95+0.1

-0.1

1.9+0.1

-0.1

Unit: mm

0.1+0.05

-0.01

1.Base

2.Emitter

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector-base voltage

Collector-Emitter voltage

Emitter-base voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

Symbol

Rating

Unit

VCBO

60

V

VCEO

50

V

VEBO

5

V

IC

150

mA

PC

100

mW

Tj

150

℃

Tstg

-55 to 150

℃

■ Electrical Characteristics Ta = 25℃

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Transition Frequency

Collector output capacitance

Noise Figure

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE

fT

Cob

NF

Test conditons

Min Typ Max Unit

IC=100μA, IE=0

60

IC=1mA, IB=0

50

IE=100μA, IC=0

5

VCB=60V, IE=0

0.1 μA

VEB=5V, IC=0

0.1 μA

VCE=6V, IC=2mA

70

700

VCE=10V, IC=1mA

80

MHz

VCB=10V, IE=0, f=1MHz

3.5 pF

VCE=6V,IC=0.1mA,f=1KHz,，RG=10KΩ

5.0 dB

■ hFE Classification

Marking

Rank

hFE

LO1

O

70～140

LYT

Y

120～240

LG1

G

200～400

LL1

L

350～700

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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