AFP02N8-212 查看數據表（PDF） - Alpha Industries
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AFP02N8-212 Datasheet PDF : 4 Pages
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General Purpose Packaged PHEMT Chips
Typical Performance Data
6
24
VDS = 2 V, IDS = 15 mA
5
20
4
16
GA (dB)
3
12
2
8
1
NFMIN (dB)
4
0
0
0 2 4 6 8 10 12 14 16 18
Frequency (GHz)
RF Minimum Noise Figure (NFMIN) and
Associated Gain (GA) vs. Frequency (GHz)
100
50
AFP02N8-212, AFP02N8-213
10
10
F = 12 GHz, VDS = 2 V
8
8
GA (dB)
6
6
4
4
NFMIN (dB)
2
2
0
0
0 5 10 15 20 25 30 35 40
IDS (mA)
RF Minimum Noise Figure (NFMIN) and
Associated Gain (GA) vs. Drain Current (IDS)
100
100
VDS = 2 V
50
50
0
0
0.5 1.0 1.5 2.0 2.5 3.0
VDS (V)
DC Drain Current (IDS) vs. Drain Voltage (VDS)
as a Function of Gate to Source Voltage (VGS)
Typical Noise Parameters
(VDS = 2 V, IDS = 15 mA)
Freq.
(GHz)
NFMIN
(dB)
Γopt
Mag.
Ang.
1
0.75
0.84
25.40
2
1.10
0.72
50.20
4
1.55
0.54
99.00
6
2.00
0.43 145.40
8
2.50
0.39 -171.80
10
3.00
0.39 -133.60
12
3.50
0.43 -100.10
14
4.00
0.48
-71.10
16
4.50
0.55
-45.90
18
5.00
0.60
-23.30
RN/50
0.12
0.23
0.23
0.15
0.16
0.32
0.66
1.16
1.77
2.38
GA (dB)
23.50
18.00
13.20
10.20
8.10
6.51
5.82
5.20
4.51
4.10
0
0
-2.0
-1.0
0
1.0
VGS (V)
DC Drain Current (IDS) and
Transconductance (gm) vs.
Gate to Source Voltage (VGS)
2
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
Specifications subject to change without notice. 6/99A
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