LTE42005S 查看數據表（PDF） - Philips Electronics
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LTE42005S Datasheet PDF : 10 Pages
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Philips Semiconductors
NPN microwave power transistor
Product specification
LTE42005S
FEATURES
• Diffused emitter ballasting resistors provide excellent
current sharing and withstanding a high VSWR
• Gold metallization realizes very stable characteristics
and excellent lifetime
• Input matching cell improves input impedance and
allows an easier design of circuits
PINNING - SOT440A
PIN
DESCRIPTION
1
collector
2
base
3
emitter connected to flange
APPLICATION
columns
1
• Common emitter class-A linear power amplifiers up
to 4.2 GHz.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT440A metal ceramic flange package with the emitter
connected to the flange.
2
Top view
c
b
3
e
MAM131
Marking code: 502
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common emitter class-A amplifier.
MODE OF OPERATION
f
(GHz)
VCE
(V)
IC
(mA)
PL1
(mW)
Class-A (CW) linear
4.2
18
110
≥450
Gpo
(dB)
≥6.6
Zi
(Ω)
100 + j40
ZL
(Ω)
4 + j4
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 21
2
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