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LY62102516(2013) 查看數據表(PDF) - Lyontek Inc.

零件编号
产品描述 (功能)
比赛名单
LY62102516
(Rev.:2013)
LYONTEK
Lyontek Inc. LYONTEK
LY62102516 Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
®
Rev. 1.0
LY62102516
1024K X 16 BIT LOW POWER CMOS SRAM
WRITE CYCLE 3 (LB#,UB# Controlled) (1,2,5,6)
tWC
Address
tAW
tWR
CE#
tAS
tCW
CE2
tBW
LB#,UB#
WE#
Dout
Din
tWP
tWHZ
(4)
High-Z
tDW
tDH
Data Valid
Notes :
1.WE#,CE#, LB#, UB# must be high or CE2 must be low during all address transitions.
2.A write occurs during the overlap of a low CE#, high CE2, low WE#, LB# or UB# = low.
3.During a WE# controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be
placed on the bus.
4.During this period, I/O pins are in the output state, and input signals must not be applied.
5.If the CE#, LB#, UB# low transition and CE2 high transition occurs simultaneously with or after WE# low transition, the outputs remain
in a high impedance state.
6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
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