MBR1535CT 查看數據表（PDF） - TSC Corporation

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MBR1535CT

SCHOTTKY BARRIER RECTIFIER

TSC Corporation 

东莞市华远电子有限公司

DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD.

TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189

TO-220 Plastic-Encapsulate Transistors

MBR1530CT-MBR1560CT

SCHOTTKY BARRIER RECTIFIER

TO— 220

FEATURES

· Schottky Barrier Chip

· Guard Ring Die Construction for Transient Protection

· Low Power Loss, High Efficiency

· High Surge Capability

· High Current Capability and Low Forward Voltage Drop

· For Use in Low Voltage, High Frequency Inverters, Free

Wheeling, and Polarity Protection Applications

1.ANODE

2.CATHODE

3.ANODE

123

1

2

2

3

ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）

Characteristic

MBR

MBR

MBR

MBR

MBR

MBR

Symbol

Unit

1530CT 1535CT 1540CT 1545CT 1550CT 1560CT

Peak Repetitive Reverse Voltage

VRRM

Working Peak Reverse Voltage

VRWM

30

35

40

45

50

60

V

DC Blocking Voltage

VR

PMS Reverse Voltage

VR(RMS)

21

24.5 28

31.5

35

42

V

Average Rectified Output Current

(Note 1)

＠　ＴＣ＝１０５℃

IO

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

IFSM

rated load

(JEDEC Method)

Forward Voltage Drop ＠　ＩＦ＝７．５Ａ，　ＴＣ＝１２５℃　

　　　　　　　　　　　　　　　　　　　　　　　　＠　ＩＦ＝７．５Ａ，　Ｔ Ｃ＝　２５℃

VFM

Peak Reverse Current

＠　ＴＣ＝　２５℃

at Rated DC Blocking Voltage ＠　ＴＣ＝１２５℃

IRM

15

150

0.57

0.70

0.1

15

A

A

0.65

V

0.75

1.0

mA

50

Typical Junction Capacitance (Note 2)

Cj

300

pF

Operating and Storage Temperature Range

Tj,TSTG

-65 to +150

℃

Notes: 1. Thermal resistance junction to case mounted heatsink.

2. Measured at 1.OMHz and applied reverse voltage of 4.0V D

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