MBR3020 查看數據表（PDF） - Shenzhen Ping Sheng Electronics Co., Ltd.
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MBR3020 Datasheet PDF : 3 Pages
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MBR3020 THRU MBR30100
Features
• Metal of siliconrectifier, majonty carrier conducton
• Guard ring for transient protection
• Low power loss high efficiency
• High surge capacity, High current capability
Maximum Ratings
• Operating Temperature: -55°C to +150°C
• Storage Temperature: -55°C to +150°C
MCC
Part Number
MBR3020
MBR3030
MBR3035
MBR3040
MBR3045
MBR3060
MBR3080
MBR30100
Maximum
Recurrent
Peak Reverse
Voltage
20V
30V
35V
40V
45V
60V
80V
100V
Maximum
RMS Voltage
14V
21V
24.5V
28V
31.5V
42V
56V
70V
Maximum DC
Blocking
Voltage
20V
30V
35V
40V
45V
60V
80V
100V
TO-3
A
N
E
PIN 1:
PIN 2:
CASE:
ANODE
ANODE
CATHODE
V
H
D
U
L
2
1
C
K
GB
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
IF(AV)
30 A TL =105°C
Peak Forward Surge
IFSM
Current
400A 8.3ms, half sine
Maximum
Instantaneous
VF
Forward Voltage
MBR3020-3045
MBR3060
MBR3080-30100
Maximum DC
.63 V
.75 V
.84 V
IFM = 30.0A;
TA = 25°C
Reverse Current At
IR
1.0 mA TA = 25°C
Rated DC Blocking
Voltage
Typical Junction
Capacitance
CJ
200pF Measured at
1.0MHz, VR=4.0V
*Pulse Test: Pulse Width 300µsec, Duty Cycle 1%
Q
DIMENSIONS
INCHES
MM
DIM MIN MAX
MIN
MAX
A
1.550 REF
39.37 REF
B
----- 1.050
-----
26.67
C
.250 .335
6.35
8.51
D
.038 .043
0.97
1.09
E
.055 .070
1.40
1.77
G
.430 BSC
10.92 BSC
H
.215 BSC
5.46 BSC
K
.440 .480 11.18 12.19
L
.665 BSC
16.89 BSC
N
-----
.830
-----
21.08
Q
.151 .165
3.84
4.19
U
1.187 BSC
30.15 BSC
V
.131 1.88
3.33
4.77
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