MBR720 查看數據表（PDF） - Shanghai Lunsure Electronic Tech
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MBR720 Datasheet PDF : 2 Pages
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Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
Features
• Metal of siliconrectifier, majonty carrier conducton
• Guard ring for transient protection
• Low power loss high efficiency
• High surge capacity, High current capability
Maximum Ratings
• Operating Temperature: -55°C to +150°C
• Storage Temperature: -55°C to +175°C
Microsemi
Catalog
Number
Device
Marking
MBR720
MBR730
MBR735
MBR740
MBR745
MBR760
MBR720
MBR730
MBR735
MBR740
MBR745
MBR760
Maximum
Recurrent
Peak
Reverse
Voltage
20V
30V
35V
40V
45V
60V
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
14V
21V
24.5V
28V
31.5V
42V
20V
30V
35V
40V
45V
60V
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
IF(AV)
7.5A TC = 125°C
Peak Forward Surge
IFSM
Current
Maximum Forward
Voltage Drop Per
VF
Element
MBR720-745
MBR760
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
MBR720-745
IR
MBR760
MBR720-745
MBR760
Typical Junction
CJ
Capacitance
150A 8.3ms, half sine
.84V
.75V
IFM = 15 A mper
IFM = 7.5 A mper
TA = 25°C*
0.1mA
0.5mA
15mA
50mA
400pF
TJ = 25°C
TJ = 125°C
Measured at
1.0MHz, VR=4.0V
MBR720
THRU
MBR760
7.5 Amp
Schottky Barrier
Rectifier
20 to 60 Volts
TO-220AC
B
L
M
C
D
K
A
E
PIN
1
2
F
I
H
G
J
N
PIN 1
PIN 2
CASE
INCHES
MM
A
.560
.625
14.22 15.88
B
.380
.420
9.65
10.67
C
.100
.135
2.54
3.43
D
.230
.270
5.84
6.86
E
.380
.420
9.65
10.67
F
------
.250
------
6.35
G
.500
.580
12.70
14.73
H
.190
.210
4.83
5.33
I
.020
.045
0.51
1.14
J
.012
.025
0.30
0.64
K
.139
.161
3.53
4.09
L
.140
.190
3.56
4.83
M
.045
.055
1.14
1.40
N
.080
.115
2.03
2.92
*Pulse test: Pulse width 300 µsec, Duty cycle 2%
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