MG50Q2YS40 查看數據表（PDF） - Toshiba
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MG50Q2YS40 Datasheet PDF : 6 Pages
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TOSHIBA GTR Module Silicon N Channel IGBT
MG50Q2YS40
High Power Switching Applications.
Motor Control Applications.
· High input impedance
· High speed: tf = 0.5µs (max.)
trr = 0.5µs (max.)
· Low saturation voltage
: VCE(sat) = 4.0V (max.)
· Enhancement−mode
· Includes a complete half bridge in one package.
· The electrodes are isolated from case.
Equivalent Circuit
MG50Q2YS40
Unit in mm
JEDEC
JEITA
TOSHIBA
Weight: 202g
―
―
2−94D1A
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-emitter voltage
Gate-emitter voltage
DC
Collector current
1ms
DC
Forward current
1ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (terminal / mounting)
Symbol
VCES
VGES
IC
ICP
IF
IFM
PC
Tj
Tstg
VIsol
―
Rating
Unit
1200
±20
50
100
50
100
400
150
-40~125
2500 (AC 1 minute)
3/3
V
V
A
A
W
°C
°C
V
N･m
1
2002-09-25
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