MKP3V120(2000) 查看數據表（PDF） - ON Semiconductor
零件编号
产品描述 (功能)
比赛名单
MKP3V120 Datasheet PDF : 8 Pages
| |||
MKP3V120, MKP3V240
Voltage Current Characteristic of SIDAC
(Bidirectional Device)
+ Current
Symbol
IDRM
VDRM
VBO
IBO
IH
VTM
ITM
Parameter
Off State Leakage Current
Off State Repetitive Blocking Voltage
Breakover Voltage
Breakover Current
Holding Current
On State Voltage
Peak on State Current
ITM
IH
VTM
Slope = RS
IS
IDRM VS
I(BO)
+ Voltage
VDRM V(BO)
+ RS
(V(BO) – VS)
(IS – I(BO))
CURRENT DERATING
130
120
α
110
α = Conduction Angle
TJ Rated = 125°C
100
90
a = 180°
80
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
IT(AV), AVERAGE ON–STATE CURRENT (AMPS)
Figure 1. Maximum Case Temperature
140
120
100
80
60
40
20
0
0
a = 180°
α
α = Conduction Angle
TJ Rated = 125°C
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
IT(AV), AVERAGE ON–STATE CURRENT (AMPS)
Figure 2. Maximum Ambient Temperature
1.0
0.8
25°C
125°C
0.6
0.4
0.3
0.2
0.1
0.8
0.9
1.0
1.1
1.2
1.3
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)
Figure 3. Typical Forward Voltage
1.25
1.00
α
α = Conduction Angle
0.75
TJ Rated = 125°C
0.50
0.25
a = 180°
0
0.2
0.4
0.6
0.8
1.0
IT(AV), AVERAGE ON–STATE CURRENT (AMPS)
Figure 4. Typical Power Dissipation
http://onsemi.com
3
Share Link: 