MMBF170 查看數據表（PDF） - Unisonic Technologies

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MMBF170

0.5A, 60V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Unisonic Technologies 

UNISONIC TECHNOLOGIES CO., LTD

MMBF170

Preliminary

0.5A, 60V N-CHANNEL

ENHANCEMENT MODE FIELD

EFFECT TRANSISTOR

„ DESCRIPTION

The UTC MMBF170 is an N-channel enhancement MOSFET

using UTC’s advanced technology to provide the customers with

perfect RDS(ON), low input capacitance, low gate threshold voltage

and high switching speed.

„ FEATURES

* RDS(ON)<5mΩ @ VGS=10V,ID=0.2A

* High Switching Speed

* Low Input Capacitance(typical 22pF)

„ SYMBOL

3.Drain

Power MOSFET

2.Gate

1.Source

„ ORDERING INFORMATION

Ordering Number

Lead Free

Halogen Free

MMBF170L-AE2-R

MMBF170G-AE2-R

Note: Pin Assignment: G: Gate D: Drain S: Source

Package

SOT-23

Pin Assignment

1

2

3

S

G

D

Packing

Tape Reel

www.unisonic.com.tw

Copyright © 2011 Unisonic Technologies Co., Ltd

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