MMBT2907ALT1 查看數據表（PDF） - Avic Technology

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MMBT2907ALT1

SOT-23 Plastic-Encapsulate PNP Transistors

Avic Technology 

@vic

MMBT2907ALT1

SOT-23 Plastic-Encapsulate Transistors

MMBT2907ALT1 TRANSISTOR (PNP)

FEATURES

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

Power dissipation

PCM:

0.3 W (Tamb=25℃)

Collector current

ICM:

-0.6 A

Collector-base voltage

V(BR)CBO:

-60 V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

2. 4

1. 3

Unit: mm

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

TYP

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

V(BR)CBO

Ic= -10µA , IE=0

-60

V(BR)CEO

IC= -10 mA , IB=0

-60

V(BR)EBO

IE= -10µA, IC=0

-5

ICBO

VCB= -50V, IE=0

ICEO

VCB= -3V, IB=0

IEBO

VEB= -3V, IC=0

hFE(1)

VCE=-10V, IC= -150mA 100

hFE(2)

VCE=-10V, IC= -1mA

50

VCE(sat)

IC=-500mA, IB=-50 mA

VBE(sat)

IC= -500mA, IB=-50 mA

Transition frequency

VCE=-20V, IC= -50mA

fT

200

f = 100MHz

MAX

-0.1

-0.1

-0.1

300

-1

-2

UNIT

V

V

V

µA

µA

µA

V

V

MHz

DEVICE MARKING:

MMBT2907ALT1 =2F

Copyright @vic Electronics Corp.

Website http://www.avictek.com

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