MMBT4403LT1 查看數據表（PDF） - Avic Technology

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MMBT4403LT1

SOT-23 Plastic-Encapsulate Transistors

Avic Technology 

@vic SOT-23 Plastic-Encapsulate Transistors

MMBT4403LT1 TRANSISTOR (PNP)

FEATURES

Power dissipation

PCM:

Collector current

0.3 W (Tamb=25℃)

ICM:

-0.6 A

Collector-base voltage

V(BR)CBO:

-40 V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

2. 4

1. 3

Unit: mm

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol Test conditions

MIN MAX UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

ICEO

IEBO

Ic=-100µA , IE=0

IC= -1mA , IB=0

IE=-100µA, IC=0

VCB=-35V, IE=0

VCE=-35V, IB=0

VEB=-4V, IC=0

-40

V

-40

V

-5

V

-0.1 µA

-0.1 µA

-0.1 µA

hFE

VCE=-2V, IC= -150mA 100 300

VCE(sat) IC=-150mA, IB=-15mA

-0.4

V

VBE(sat) IC=- 150mA, IB=-15mA

-0.95 V

VCE= -10V, IC= -20mA

fT

200

f = 100MHz

MHz

DEVICE MARKING

MMBT4403LT1=2T

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