MMBT5401LT1 查看數據表（PDF） - Avic Technology

零件编号

产品描述 (功能)

比赛名单

MMBT5401LT1

SOT-23 Plastic-Encapsulate Transistors

Avic Technology 

@vic SOT-23 Plastic-Encapsulate Transistors

MMBT5401LT1 TRANSISTOR (PNP)

FEATURES

Power dissipation

PCM:

0.3 W (Tamb=25℃)

Collector current

ICM:

-0.6 A

Collector-base voltage

V(BR)CBO:

-160 V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

-

2. 4

1. 3

Unit: mm

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol Test conditions

MIN

MAX UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter

voltage

Transition frequency

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

HFE(1)

HFE(2)

HFE(3)

saturation

VCE(sat)

VBE(sat)

fT

Ic= -100 µA, IE=0

Ic= -1 mA, IB=0

IE= -10µA, IC=0

VCB=-120V, IE=0

VEB=-4V, IC=0

VCE= -5V, IC= -1mA

VCE= -5V, IC=-10mA

VCE= -5V, IC=-50mA

IC=-50mA, IB= -5mA

IC= -50mA, IB= -5mA

VCE= -5V, IC= -10mA

f=30MHz

-160

-150

-5

80

100

50

100

V

V

V

-0.1 µA

-0.1 µA

200

-0.5

V

-1

V

MHz

DEVICE MARKING

MMBT5401LT1=2L

Share Link: