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MMDF2C03HD Datasheet PDF : 10 Pages
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MMDF2C03HD
Power MOSFET
2 Amps, 30 Volts
Complementary SO−8, Dual
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain-to-source diode has a very low reverse recovery time. These
devices are designed for use in low voltage, high speed switching
applications where power efficiency is important. Typical applications
are dc-dc converters, and power management in portable and battery
powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass
storage products such as disk drives and tape drives. The avalanche
energy is specified to eliminate the guesswork in designs where
inductive loads are switched and offer additional safety margin against
unexpected voltage transients.
Features
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive − Can Be Driven by Logic ICs
• Miniature SO-8 Surface Mount Package − Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for SO-8 Package Provided
• This is a Pb−Free Device
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1)
Rating
Symbol Value Unit
Drain−to−Source Voltage
VDSS
30
Vdc
Gate−to−Source Voltage
VGS
± 20
Vdc
Drain Current − Continuous
N−Channel ID
P−Channel
4.1
A
3.0
Drain Current − Pulsed
N−Channel IDM
21
P−Channel
15
Operating and Storage Temperature Range
Total Power Dissipation @ TA= 25°C (Note 2)
Thermal Resistance, Junction−to−Ambient
(Note 2)
TJ, Tstg
PD
RqJA
− 55 to 150
2.0
62.5
°C
W
°C/W
Single Pulse Drain−to−Source Avalanche
EAS
Energy − Starting TJ = 25°C
(VDD = 30 V, VGS = 5.0 V, Peak IL = 9.0 Apk,
L = 8.0 mH, RG = 25 W)
N−Channel
(VDD = 30 V, VGS = 5.0 V, Peak IL = 6.0 Apk,
L = 18 mH, RG = 25 W)
P−Channel
Max Lead Temperature for Soldering, 0.0625″
TL
from case. Time in Solder Bath is 10 seconds
mJ
324
324
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Negative signs for P−Channel device omitted for clarity.
2. Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with
one die operating, 10 sec. max.
http://onsemi.com
2 AMPERES, 30 VOLTS
RDS(on) = 70 mW (N-Channel)
RDS(on) = 200 mW (P-Channel)
N−Channel
D
P−Channel
D
G
G
S
S
MARKING
DIAGRAM
8
1
SO−8
CASE 751
STYLE 14
8
D2C03
AYWWG
G
1
D2C03 = Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
N−Source
N−Gate
P−Source
P−Gate
1 8 N−Drain
2 7 N−Drain
3 6 P−Drain
4 5 P−Drain
ORDERING INFORMATION
Device
Package
Shipping†
MMDF2C03HDR2G SO−8 2500 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
1
October, 2011 − Rev. 8
Publication Order Number:
MMDF2C03HD/D
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