MMSZ4678ET1 查看數據表（PDF） - ON Semiconductor
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MMSZ4678ET1 Datasheet PDF : 5 Pages
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MMSZ4678ET1 Series
TYPICAL CHARACTERISTICS
1000
0 V BIAS
1 V BIAS
100
TA = 25°C
1000
100
10
1
BIAS AT
50% OF VZ NOM
10
0.1
0.01
0.001
0.0001
1
0.00001
1
10
100
0
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 7. Typical Capacitance
+150°C
+ 25°C
− 55°C
10 20 30 40 50 60 70 80 90
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 8. Typical Leakage Current
100
100
TA = 25°C
TA = 25°C
10
10
1
1
0.1
0.1
0.01 0
2
4
6
8
10
VZ, ZENER VOLTAGE (V)
12 0.0110
30
50
70
90
VZ, ZENER VOLTAGE (V)
Figure 9. Zener Voltage versus Zener Current
(VZ Up to 12 V)
Figure 10. Zener Voltage versus Zener Current
(12 V to 91 V)
100
90 tr
80
70
60
PEAK VALUE IRSM @ 8 ms
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
50
HALF VALUE IRSM/2 @ 20 ms
40
30
tP
20
10
0
0
20
40
60
80
t, TIME (ms)
Figure 11. 8 × 20 ms Pulse Waveform
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