MRF10005 查看數據表（PDF） - Tyco Electronics

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MRF10005

Microwave Power Transistor

Tyco Electronics 

SEMICONDUCTOR TECHNICAL DATA

The RF Line

Microwave Power Transistor

. . . designed for CW and long pulsed common base amplifier applications,

such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high

overall duty cycles.

• Guaranteed Performance @ 1.215 GHz, 28 Vdc

Output Power = 5.0 Watts CW

Minimum Gain = 8.5 dB, 10.3 dB (Typ)

• RF Performance Curves given for 28 Vdc and 36 Vdc Operation

• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR

• Hermetically Sealed Industry Standard Package

• Silicon Nitride Passivated

• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal

Migration

• Internal Input Matching for Broadband Operation

Order this document

by MRF10005/D

MRF10005

5.0 W, 960–1215 MHz

MICROWAVE POWER

TRANSISTOR

NPN SILICON

CASE 336E–02, STYLE 1

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous (1)

Total Device Dissipation @ TA = 25°C (1)

Derate above 25°C

VCES

VCBO

VEBO

IC

PD

55

Vdc

55

Vdc

3.5

Vdc

1.25

mAdc

25

Watt

143

mW/°C

Storage Temperature Range

Junction Temperature

THERMAL CHARACTERISTICS

Characteristic

Tstg

TJ

Symbol

–65 to +200

200

Max

°C

°C

Unit

Thermal Resistance, Junction to Case (2)

RθJC

7.0

°C/W

NOTES:

1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF amplifiers.

2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.

REV 6

1

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