MUR140 查看數據表（PDF） - Silicon Standard Corp.
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MUR140 Datasheet PDF : 4 Pages
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MUR140
MUR160
MAXIMUM RATINGS (TA=25℃ unless otherwise specified)
Parameter
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at TA =120℃
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum instantaneous forward Iat F =1.0A, TJ =25℃
voltage (Note 1)
at IF =1.0A, TJ =150℃
Maximum instantaneous reverse
current at rated DC blocking
voltage (Note 1)
TJ =25℃
TJ =150℃
Maximum reverse recovery time
at IF =0.5A, IR =1.0A, I rr =0.25A
Maximum reverse recovery time
at IF =1.0A, di/dt=50A/us, VR
=30V, I rr =10%
IRM
Maximum forward recovery time at IF =1.0A,
di/dt=100A/us, recovery to 1.0V
Typical thermal resistance junction to ambient (Note 2)
Operating junction and storage temperature range
Symbols
VRRM
VRWM
VDC
IF(AV)
IFSM
VF
IR
trr
trr
tfr
RθJA
TJ, TSTG
MUR140
MUR160
400
600
400
600
400
600
1.0
35.0
1.25 1.05
5.0 150
50
75
50
50
-55 to +175
Units
Volts
Volts
Volts
Amp
Amps
Volts
uA uA
nS
nS
nS
℃/W
℃
NOTE:
1. Pulse test: tp=300us, duty cycle < 2%
2. Lead length = 3/8” on P.C. Board with 1.5” x 1.5” copper surface
01/01/2007 Rev. 1.00
www.SiliconStandard.com
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