NJW1302G 查看數據表（PDF） - ON Semiconductor
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NJW1302G Datasheet PDF : 7 Pages
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NJW3281G (NPN) NJW1302G (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
Collector Cutoff Current
(VCB = 250 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non−repetitive)
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5 Vdc)
(IC = 1 Adc, VCE = 5 Vdc)
(IC = 3 Adc, VCE = 5 Vdc)
(IC = 5 Adc, VCE = 5 Vdc)
(IC = 8 Adc, VCE = 5 Vdc)
Collector−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
Base−Emitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
Symbol
VCEO(sus)
ICBO
IEBO
IS/b
hFE
VCE(sat)
VBE(on)
fT
Cob
Min
Typ
Max
Unit
250
−
−
−
−
−
Vdc
−
mAdc
50
mAdc
5
Adc
4
−
−
−
75
−
150
75
−
150
75
−
150
60
−
−
45
−
−
Vdc
−
0.4
0.6
Vdc
−
−
1.5
MHz
−
30
−
pF
−
−
600
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