datasheetbank_Logo
数据手册搜索引擎和 Datasheet免费下载 PDF

PBSS5140D 查看數據表(PDF) - Philips Electronics

零件编号
产品描述 (功能)
比赛名单
PBSS5140D
Philips
Philips Electronics Philips
PBSS5140D Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Philips Semiconductors
40 V low VCEsat PNP transistor
Product specification
PBSS5140D
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient in free air; note 1
272
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated and mounting pad for collector 1 cm2.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector-base cut-off current
ICEO
collector-emitter cut-off current
IEBO
emitter-base cut-off current
hFE
DC current gain
VCEsat
collector-emitter saturation
voltage
RCEsat
VBEsat
VBEon
fT
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn on voltage
transition frequency
Cc
collector capacitance
Note
1. Pulse test: tp 300 µs; δ ≤ 0.02.
CONDITIONS
VCB = 40 V; IC = 0
VCB = 40 V; IC = 0; Tj = 150 °C
VCE = 30 V; IB = 0
VEB = 5 V; IC = 0
VCE = 5 V
IC = 1 mA
IC = 100 mA
IC = 500 mA
IC = 1 A
IC = 100 mA; IB = 1 mA
IC = 500 mA; IB = 50 mA
IC = 1 A; IB = 100 mA
IC = 500 mA; IB = 50 mA; note 1
IC = 1 A; IB = 50 mA
VCE = 5 V; IC = 1 A
IC = 50 mA; VCE = 10 V;
f = 100 MHz
VCB = 10 V; IE = Ie = 0; f = 1 MHz
MIN.
300
300
250
160
150
TYP.
300
MAX. UNIT
100 nA
50 µA
100 nA
100 nA
800
200
250
500
<500
1.1
1
mV
mV
mV
m
V
V
MHz
12 pF
2001 Nov 15
3
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]