EDB104 查看數據表（PDF） - Rectron Semiconductor

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EDB104

GLASS PASSIVATED SUPER FAST SILICON SURFACE MOUNT BRIDGE RECTIFIER

Rectron Semiconductor 

RATING AND CHARACTERISTICS CURVES ( EDB101 THRU EDB106 )

100

TJ = 25 OC

10

1.0

0.1

Pulse Width=300mS

1% Duty Cycle

0.01

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

INSTANTANEOUS FORWARD VOLTAGE, (V)

FIG.4 TYPICAL INSTANTANEOUS FORWARD

CHARACTERISTICS

35

8.3ms Single Half Sine-Wave

(JEDED Method)

30

25

20

15

10

5

01

2

5

10 20

50

100

NUMBER OF CYCLES AT 60Hz

FIG.5 MAXIMUM NON-REPETITIVE FORWARD

SURGE CURRENT

200

100

60

40

20

EDB101~EDB104

10

EDB105~EDB106

6

4

2 TJ = 25 OC

1

0.1 0.2 0.4

1.0 2 4

10 20 40 100

REVERSE VOLTAGE, (V)

FIG.6 TYPICAL JUNCTION CAPACITANCE

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