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RMWP23001 查看數據表(PDF) - Fairchild Semiconductor

零件编号
产品描述 (功能)
比赛名单
RMWP23001
Fairchild
Fairchild Semiconductor Fairchild
RMWP23001 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Electrical Characteristics (At 25°C), 50system, Vd = +4V, Quiescent Currrent Idq = 400mA
Parameter
Frequency Range
Gate Supply Voltage (Vg)1
Gain Small Signal at Pin = -8dBm
Gain Variation vs. Frequency
Gain at 1dB Compression
Power Output at 1dB Compression
Power Output Saturated: Pin = +3dBm
Drain Current at Pin = -8dBm
Drain Current at 1dB Compression
Drain Current at Saturated: Pin = +3dBm
Power Added Efficiency (PAE): at P1dB
Input Return Loss (Pin = -8dBm)
Output Return Loss (Pin = -8dBm)
OIP3
Noise Figure
Note:
1. Typical range of gate voltage is -0.7 to -0.05V to set Idq of 400mA.
Min
Typ
Max
21
24
-0.3
20
22.5
1.0
21.5
24
22
25
400
430
410
15
14
12
33
8
Units
GHz
V
dB
dB
dB
dBm
dBm
mA
mA
mA
%
dB
dB
dBm
dB
©2004 Fairchild Semiconductor Corporation
RMWP23001 Rev. C

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