RSR020P03 查看數據表（PDF） - ROHM Semiconductor

零件编号

产品描述 (功能)

生产厂家

RSR020P03

4V Drive Pch MOS FET

ROHM Semiconductor 

Transistors

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min. Typ. Max. Unit

Conditions

Gate-source leakage

IGSS

−

− ±10 µA VGS=±20V, VDS=0V

Drain-source breakdown voltage V(BR) DSS −30 −

−

V ID= −1mA, VGS=0V

Zero gate voltage drain current IDSS

−

−

−1 µA VDS= −30V, VGS=0V

Gate threshold voltage

VGS (th) −1.0 − −2.5 V VDS= −10V, ID= −1mA

−

Static drain-source on-state

resistance

RDS (on)∗

−

−

85 120 mΩ ID= −2A, VGS= −10V

135 190 mΩ ID= −1A, VGS= −4.5V

150 210 mΩ ID= −1A, VGS= −4V

Forward transfer admittance Yfs ∗ 1.4 −

−

S VDS= −10V, ID= −1A

Input capacitance

Ciss

− 370 −

pF VDS= −10V

Output capacitance

Coss

−

80

−

pF VGS=0V

Reverse transfer capacitance Crss

− 55 − pF f=1MHz

Turn-on delay time

Rise time

Turn-off delay time

Fall time

td (on) ∗ −

8

−

ns VDD −15V

tr ∗ −

td (off) ∗ −

10

35

−

−

ns ID= −1A

VGS= − 10V

ns RL=15Ω

tf ∗ −

11

−

ns RG=10Ω

Total gate charge

Qg ∗ −

4.3

−

nC VDD −15V VGS= −5V

Gate-source charge

Qgs ∗ −

1.4

−

nC ID= −2A

Gate-drain charge

Qgd ∗ −

1.5

−

nC RL=7.5Ω RG=10Ω

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter

Forward voltage

Symbol Min. Typ. Max. Unit

Conditions

VSD ∗

−

− −1.2 V IS= −0.8A, VGS=0V

∗Pulsed

RSR020P03

2/2

Share Link: