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S1G 查看數據表(PDF) - Silicon Standard Corp.

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S1G Datasheet PDF : 4 Pages
1 2 3 4
MAXIMUM RATINGS (TA=25unless otherwise specified)
S1A – S1M
Parameter
Symbols S1A
Maximum repetitive peak reverse voltage VRRM 50
Maximum RMS voltage
VRMS 35
Maximum DC blocking voltage
VDC
50
Maximum average forward rectified current
(see fig.1)
Peak forward surge current 8.3ms single
half sine-wave superimposed on rated
load(JEDEC Method) TL =110
Maximum instantaneous forward voltage at
1.0A
Maximum DC reverse current @TA =25
at rated DC blocking voltage @TA=125
IF(AV)
IFSM
VF
IR
Typical reverse recovery time at
IF =0.5A, IR=1.0A, Irr =0.25A
Typical junction capacitance at 4.0V, 1MHz
Typical thermal resistance (NOTE 1)
Operating junction temperature range
Storage temperature range
trr
CJ
R
RJL
TJ
TSTG
S1B
100
70
100
S1D S1G S1J
200 400 600
140 280 420
200 400 600
1.0
40.0
1.10
1.0
50
1.0
12
75
27
-55 to +150
-55 to +150
S1K S1M Units
800 1000 Volts
560 700 Volts
800 1000 Volts
Amp
30.0
Amps
Volts
5.0
uA
uS
pF
85
/W
30
NOTE:
1. Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with
0.2 x 0.2" (5.0 x 5.0mm) copper pad areas
01/01/2007 Rev. 2.00
www.SiliconStandard.com
2

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