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SBL1030 查看數據表(PDF) - General Semiconductor

零件编号
产品描述 (功能)
比赛名单
SBL1030
GE
General Semiconductor GE
SBL1030 Datasheet PDF : 2 Pages
1 2
RATINGS AND CHARACTERISTIC CURVES SBL1030 AND SBL1040
12.5
FIG. 1 - FORWARD CURRENT DERATING CURVE
RESISTIVE OR INDUCTIVE LOAD
10
7.5
5
2.5
0
0
50
100
150
CASE TEMPERATURE, °C
FIG. 3 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
50
10
TJ=125°C
PULSE WIDTH = 300µs
1% DUTY CYCLE
1
TJ=25°C
0.1
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
4,000
1,000
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
TJ=25°C
f=1.0 MHz
Vsig=50mVp-p
100
0.1
1
10
100
REVERSE VOLTAGE, VOLTS
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
300
TJ=TJ max.
250
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
200
150
100
50
0
1
10
100
NUMBER OF CYCLES AT 60 HZ
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
50
10
TJ=125°C
1
TJ=75°C
0.1
0.01
TJ=25°C
0.001
0
20
40
60
80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE, %
FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10.0
1
0.1
0.01
0.1
1
10.0
100
t, PULSE DURATION, sec.

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