SBL1630CT 查看數據表（PDF） - Vishay Semiconductors
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SBL1630CT Datasheet PDF : 5 Pages
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SBL(F,B)1630CT & SBL(F,B)1640CT
Vishay General Semiconductor
100
TJ = 125 °C
10
Pulse Width = 300 µs
1 % Duty Cycle
TJ = 25 °C
1
0.1
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
100
TJ = 125 °C
10
1
TJ = 75 °C
0.1
0.01
TJ = 25 °C
0.001
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
100
10
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance Per Diode
Document Number: 88727 For technical questions within your region, please contact one of the following:
Revision: 07-May-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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