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SD1425

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor 

SD1425

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI SD1425 is Designed for

Class AB Linear Base Station

Applications in the 800-900 MHz

Frequency Range.

FEATURES INCLUDE:

• Gold Metalization

• Input Matching

• Common Emitter

• Emitter Ballast Resistors

MAXIMUM RATINGS

IC

5.0 A

VCBO

50 V

VCES

PDISS

TJ

T STG

θ JC

45 V

43 W @ TC = 25 OC

-65 OC to +200 OC

-65 OC to +150 OC

3.0 OC/W

PACKAGE STYLE .230 6L FLG

1,3,4,6 = EMITTER 2 = BASE

5 = COLLECTOR

CHARACTERISTICS TC = 25 OC

SYMBOL

TEST CONDITIONS

BVCBO

IC = 100 mA

BVCEO

IC = 40 mA

BVCER

IC = 50 mA

RBE = 22 Ω

BVEBO

IE = 10 mA

ICBO

VCB = 24 V

hFE

VCE = 10 V

IC = 200 mA

MINIMUM TYPICAL MAXIMUM

50

25

50

3.5

2.0

20

100

UNITS

V

V

V

V

mA

---

Cob

VCB = 24 V

f = 1.0 MHz

40

50

pF

Pout

30

W

GP

VCC = 24 V

Pin = 5.3 W

f = 960 MHz

7.5

dB

ηc

45

50

%

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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