SGA-8343X 查看數據表（PDF） - Stanford Microdevices

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SGA-8343X

Reliability Qualification Report

Stanford Microdevices 

SGA-8343X Reliability Qualification Report

XII. Junction Temperature Determination

One key issue in performing qualification testing is to accurately determine the junction

temperature of the device. Sirenza Microdevices uses a 3um spot size emissivity

corrected infrared camera measurement to resolve the surface temperature of the device

at the maximum operational power dissipation. The results are displayed below for the

device running at operational current of 50mA, a device voltage of 4V, and a lead

temperature of 85°C.

Tj = 112.9°C

Figure 2: Infrared Thermal Image of SGA-8343X, Vd =4V, Id =50 mA, T lead = 85°C

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