T431616A 查看數據表（PDF） - Taiwan Memory Technology

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T431616A

1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

Taiwan Memory Technology 

tm TE

CH

AC OPERATING CONDITIONS

(VDD=3.3V ±0.3V ,TA= -5 to 70°C /-40 to +85°C )

Parameter

Value

Input levels (VIH/VIL)

Input timing measurement reference level

Input rise and fall time

Output timing measurement reference level

Output load condition

3.0 / 0

1.4

tr / tf = 1 / 1

1.4

See Fig.2

T431616A

Unit

V

V

ns

V

Output

870 ohm

3.3V

1200 ohm

VOH(DC)=2.4,IOH=-2mA

VOL(DC)=0.4,IOL=2mA

30pf

Output

ZO=50 ohm

Vtt=1.4v

50 ohm

30pf

(Fig.1) DC Output Load Circuit

(Fig.2)AC Output Load Circuit

Taiwan Memory Technology, Inc. reserves the right P. 7

to change products or specifications without notice.

Publication Date: DEC. 2000

Revision: C

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