IRF5NJ3315SCV 查看數據表（PDF） - International Rectifier

零件编号

产品描述 (功能)

比赛名单

IRF5NJ3315SCV

HEXFET® POWER MOSFET SURFACE MOUNT (SMD-0.5)

International Rectifier 

IRF5NJ3315

20

16

12

8

4

0

25

50

75

100

125

150

TC , Case Temperature ( °C)

Fig 9. Maximum Drain Current Vs.

Case Temperature

10

VDS

VGS

RG

RD

D.U.T.

VGS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

+-V D D

Fig 10a. Switching Time Test Circuit

VDS

90%

10%

VGS

td(on) tr

td(off) tf

Fig 10b. Switching Time Waveforms

1

D = 0.50

0.20

0.10

0.05

0.1

0.02

0.01

SINGLE PULSE

( THERMAL RESPONSE )

0.01

1E-005

0.0001

0.001

0.01

t1 , Rectangular Pulse Duration (sec)

P DM

t1

t2

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.1

1

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com

5

Share Link: