IRFB13N50A 查看數據表（PDF） - International Rectifier

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比赛名单

IRFB13N50A

HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.450 Ohm, ID = 14A

International Rectifier 

IRFB13N50A

1150

ID

TOP

6.3A

8.9A

920

BOTTOM

14A

15V

690

VDS

L

D R IV E R

460

230

0

25

50

75

100

125

150

Starting Tj, Junction Temperature ( ° C)

Fig 12a. Maximum Avalanche Energy

vs. Drain Current

RG

20V

tp

D .U .T

IA S

0 .0 1Ω

+

- VD D

A

Fig 12c. Unclamped Inductive Test Circuit

V (B R)DSS

tp

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

.3µF

D.U.T.

+

-VDS

VGS

3mA

IG

ID

Current Sampling Resistors

Fig 13a. Gate Charge Test Circuit

6

IAS

Fig 12d. Unclamped Inductive Waveforms

QG

VGS

QGS

QGD

VG

Charge

Fig 13b. Basic Gate Charge Waveform

www.irf.com

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