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IRF440 查看數據表(PDF) - International Rectifier

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IRF440 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
IRF440
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
BVDSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min
500
2.0
4.7
27.3
2.0
11
Typ Max Units
—— V
0.78 — V/°C
— 0.85
— 0.98
— 4.0 V
— — S( )
— 25
— 250 µA
— 100 nA
— -100
— 68.5
— 12.5 nC
— 42
— 21
— 73 ns
— 72
— 51
6.1 — nH
1300
310 — pF
120 —
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 10V, ID = 5.0A
VGS = 10V, ID =8.0A
VDS = VGS, ID =250µA
VDS > 15V, IDS = 5.0A
VDS=400V, VGS=0V
VDS = 400V
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =10V, ID=8.0A
VDS = 250V
VDD =250V, ID =8.0A,
RG =9.1
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode)
— — 8.0 A
— — 32
Test Conditions
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
— — 1.5 V
— — 700 nS
— — 8.9 µC
Tj = 25°C, IS = 8.0A, VGS = 0V
Tj = 25°C, IF = 8.0A, di/dt 100A/µs
VDD 50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction to Case
Junction to Ambient
For footnotes refer to the last page
2
Min Typ Max Units
— — 1.0
°C/W
— — 30
Test Conditions
Typical socket mount
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