B380C800G 查看數據表（PDF） - Vishay Siliconix
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B380C800G Datasheet PDF : 4 Pages
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B40C800G thru B380C800G
Vishay General Semiconductor
50
TJ = 25 °C
10 ms Single Sine-Wave
40
30
20
10
1.0 Cycle
0
1
10
100
Number of Cycles at 50 Hz
Figure 3. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
100
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
10
10
1
TJ = 100 °C
0.1
0.01
0
TJ = 25 °C
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typical Reverse Characteristics Per Diode
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1
10
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
Figure 4. Typical Forward Characteristics Per Diode
1
0.1
1
10
100
Reverse Voltage (V)
Figure 6. Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style WOG
0.388 (9.86)
0.348 (8.84)
0.220 (5.6)
0.160 (4.1)
1.0 (25.4) MIN.
0.032 (0.81)
0.028 (0.71)
0.060 (1.52)
0.020 (0.51)
0.348 (8.84)
0.308 (7.82)
0.220 (5.6)
0.180 (4.6)
0.220 (5.6)
0.180 (4.6)
Document Number: 88534 For technical questions within your region, please contact one of the following:
Revision: 15-Apr-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
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