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GS882Z36BD-166 查看數據表(PDF) - Giga Semiconductor

零件编号
产品描述 (功能)
比赛名单
GS882Z36BD-166
GSI
Giga Semiconductor GSI
GS882Z36BD-166 Datasheet PDF : 33 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
GS882Z18/36BB/D-250/225/200/166/150/133
Recommended Operating Temperatures
Parameter
Symbol Min.
Typ.
Max.
Unit Notes
Ambient Temperature (Commercial Range Versions)
TA
0
25
70
°C
2
Ambient Temperature (Industrial Range Versions)
TA
40
25
85
°C
2
Note:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be 2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
Undershoot Measurement and Timing
VIH
VSS
50%
VSS 2.0 V
20% tKC
Overshoot Measurement and Timing
VDD + 2.0 V
50%
20% tKC
VDD
VIL
Capacitance
(TA = 25oC, f = 1 MHZ, VDD = 2.5 V)
Parameter
Symbol
Input Capacitance
CIN
Input/Output Capacitance
CI/O
Note: These parameters are sample tested.
Test conditions
VIN = 0 V
VOUT = 0 V
Typ. Max. Unit
4
5
pF
6
7
pF
Package Thermal Characteristics
Rating
Layer Board Symbol
Max
Unit Notes
Junction to Ambient (at 200 lfm)
single
RΘJA
40
°C/W
1,2
Junction to Ambient (at 200 lfm)
four
RΘJA
24
°C/W
1,2
Junction to Case (TOP)
RΘJC
9
°C/W
3
Notes:
1. Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient.
Temperature air flow, board density, and PCB thermal resistance.
2. SCMI G-38-87
3. Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1
Rev: 1.00b 12/2002
16/33
© 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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