2N6057(V2) 查看數據表（PDF） - Comset Semiconductors

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2N6057
(Rev.:V2)

POWER COMPLEMENTARY SILICON TRANSISTORS

Comset Semiconductors 

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Mx Unit

ICEX

Collector Cutoff Current

ICEO

Collector Cutoff Current

IEBO

Emitter Cutoff Current

VCEO(SUS)

Collector-Emitter

Sustaining Voltage (*)

VCE= VCEX =60 V, VBE=-1.5 V

2N6050

2N6057

-

-

VCE= VCEX =80 V, VBE=-1.5 V

2N6051

2N6058

-

- 500 µA

VCE= VCEX =100 V,

VBE=-1.5 V

2N6052

2N6059

-

-

VCE= VCEX =60 V, VBE=-1.5 V 2N6050

TC=150°C

2N6057

-

-

VCE= VCEX =80 V, VBE=-1.5 V 2N6051

TC=150°C

2N6058

-

-

5 mA

VCE= VCEX =100 V,

VBE=-1.5 V, TC=150°C

2N6052

2N6059

-

-

VCE=30 Vdc, IB=0

2N6050

2N6057

-

-

VCE=40 Vdc, IB=0

2N6051

2N6058

-

- 1.0 mA

VCE=50 Vdc, IB=0

2N6052

2N6059

-

-

2N6050

2N6057

-

-

VEB=5 V

2N6051

2N6058

-

- 2.0 mA

2N6052

2N6059

-

-

2N6050

2N6057

60

-

-

IC=0.1 A

2N6051

2N6058

80

-

-

V

2N6052

2N6059

100

-

-

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