SD103AWS 查看數據表（PDF） - Galaxy Semi-Conductor

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比赛名单

SD103AWS

Schottky Barrier Diode

Galaxy Semi-Conductor 

Production specification

Schottky Barrier Diode SD103AWS/SD103BWS/SD103CWS

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Reverse Breakdown Voltage SD103AWS

SD103BWS

SD103CWS

Symbol

V(BR)R

Min.

40

30

20

Typ.

-

Forward voltage

Reverse current

Junction Capacitance

VF

SD103AWS

SD103BWS IRM

SD103CWS

CJ

-

-

-

-

-

-

Reverse Recovery Time

trr

-

10

Max. Unit

-

V

0.37

V

0.60

5.0 μA

50 pF

-

ns

Conditions

IR=10μA

IR=10μA

IR=10μA

IF=20mA

IF=200mA

VR=30V

VR=20V

VR=10V

VR=0,f=1MHz

IR=IF=200mA

Irr=0.1*IR,RL=100

Ω

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

B025

Rev.A

www.gmesemi.com

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