HIGH SPEED SYNCHRONOUS POWER
MOSFET SMART DRIVER
SC1405B
March 14, 2000
ELECTRICAL CHARACTERISTICS (DC OPERATING SPECIFICATIONS) Cont.
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
AC OPERATING SPECIFICATIONS
HIGH-SIDE DRIVER
rise time
trTG,
CI = 3nF, VBST - VDRN = 4.6V,
14 23
ns
fall time
tfTG
CI = 3nF, VBST - VDRN = 4.6V,
12 19
ns
propagation delay time,
TG going high
propagation delay time,
TG going low
LOW-SIDE DRIVER
rise time
tpdhTG
tpdlTG
CI = 3nF, VBST - VDRN = 4.6V,
C-delay=0
CI = 3nF, VBST - VDRN = 4.6V,
trBG
CI = 3nF, VV_5 = 4.6V,
20 32
ns
15 24
ns
15 24
ns
fall time
trBG
CI = 3nF, VV_5 = 4.6V,
13 21
ns
propagation delay time
BG going high
tpdhBGHI
CI = 3nF, VV_5 = 4.6V,
DRN < 1V
progagation delay time
BG going low
tpdlBG
CI = 3nF, VV_5 = 4.6V,
UNDER-VOLTAGE LOCKOUT
V_5 ramping up
V_5 ramping down
PRDY
tpdhUVLO
tpdlUVLO
EN is High
EN is High
EN is transitioning from low to
high
tpdhPRDY
V_5 > UVLO threshold, Delay
measured from EN > 2.0V to
PRDY > 3.5V
EN is transitioning from high to
low
tpdhUVLO
V_5 > UVLO threshold. Delay
measured from EN < 0.8V tp
PRDY < 10% of V_5
DSPS_DR
rise/fall time
propagation delay,
DSPS_DR going high
trDSPS_DR,
tfDSPS_DR
CI = 100pf, V_5 = 4.6V,
tpdhDSPS_DR
S_MOD goes high and
BG goes high or S_MOD goes low
propagation delay
DSPS_DR goes low
tpdlDSPS_DR S_MOD goes high and BG goes
low
OVERVOLTAGE PROTECTION
propagation delay
OVP_S going high
tpdhOVP_S V_5 = 4.6V, TJ = 125°C, OVP_S >
1.2V to BG > 90% of V_5
12 19
ns
7
12
ns
10
us
10
us
10
µs
500 µs
20
ns
10
ns
10
ns
1
µs
© 2000 SEMTECH CORP.
4
652 MITCHELL ROAD NEWBURY PARK CA 91320