IRF3515L 查看數據表（PDF） - International Rectifier
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IRF3515L Datasheet PDF : 10 Pages
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IRF3515S/L
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
Min.
150
–––
–––
3.0
–––
–––
–––
–––
Typ. Max.
––– –––
0.21 –––
––– 0.045
––– 4.5
––– 25
––– 250
––– 100
––– -100
Units
V
V/°C
Ω
V
µA
nA
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 25A
VDS = VGS, ID = 250µA
VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 150°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
Qg
Total Gate Charge
15 ––– ––– S VDS = 50V, ID = 25A
––– ––– 107
ID = 25A
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
––– ––– 23
––– ––– 65
nC VDS = 120V
VGS = 10V, See Fig. 6 and 13
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
––– 17 –––
VDD = 75V
––– 120 ––– ns ID = 25A
––– 34 –––
RG = 2.5Ω
––– 63 –––
RD = 3.0Ω,See Fig. 10
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 2260 –––
––– 530 –––
VGS = 0V
VDS = 25V
––– 170 ––– pF ƒ = 1.0MHz, See Fig. 5
––– 3330 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
––– 230 –––
––– 280 –––
VGS = 0V, VDS = 120V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 120V
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
670
25
20
Units
mJ
A
mJ
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted, steady-state)*
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 41
A showing the
integral reverse
G
––– ––– 164
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 25A, VGS = 0V
––– 200 300 ns TJ = 25°C, IF = 25A
––– 1.6 2.4 µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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